Demonstrated dielectric protection of window layer. Marvin, assessment of multijunction solar cell performance in radiation environments, tor0012101 this figure is fouo. The pet packaging sheet is attached to the cell substrate using a spacegrade encapsulant dow corning 93500, with a refractive index 1. Performing organization name and address jet propulsion laboratory california institute of technology 4800 oak grove drive pasadena, california 91109 12. Ultralight flexible ingapingaas tandem solar cells with conversion efficiency of 28.
Multijunction solar cells provide us a viable approach to achieve efficiencies higher than the shockleyqueisser limit. Second, we use a similar strategy for gaas solar cells with thicknesses 10 times thinner than. Pdf a gaas solar cell without prismatic covers, with the highest efficiency known to the authors in the range of 2000 suns for a single junction. Gaas ingaas twojunction cell, to demonstrate a proof of principle for the viability of direct wafer bonding for solar cell applications. Here, we report the first realization of nanowireonsi. The lifetime of solar cells is restricted by the degree of. Gaas ge heterostructure solar cells is justified from the photoluminescence spectroscopy.
Study of the physical parameters on the gaas solar cell. Flexible ingapingaas tandem solar cells with very high. Highefficiency thinfilm ingapingaasge tandem solar. Antireflective coating gaas ge single junction solar cells. Due to their unique optical, electrical, and crystallographic features, semiconductor nanowires are good candidates to achieve monolithic integration of solar cell materials that are not latticematched. Presented at the pv module reliability workshop, february 26 27 20, golden, colorado created date. Furthermore, the entirety of the elements used for the layer. A library of semiconducting polymers with different band gaps and energy levels were evaluated in gaas polymer planar heterojunctions. Pdf numerical simulation of gaas solar cell aging under.
All solar cells include the latest triple and quadruple junction technology, where gainpgaasge layers are grown on a germanium substrate and the whole product range benefits from many years experience on the space. Steiner 1 1national renewable energy laboratory, golden, colorado, united states 2solaero technologies corp. Silver paste contacts performed better than wire bond contacts. Gegaasingap triple junction solar cells for space exploration. Measurements and modeling of iiiv solar cells at high. Flood nasa lewis research center 2 brookpark road, cleveland, oh 445 abstract minority carrier diffusion length is one of the most important parameters affecting the solar cell performance. The electrical performance of gaas solar cells was characterized as a function of irradiation with protons and electrons with the underlying goal of producing solar cells suitable for use in space. Highefficiency gaas thinfilm solar cell reliability author. This work investigates the potential of csvt to produce highefficiency iiiv pv by fabricating and characterizing gaas films and simple homojunction solar cells. Alingap subcell determined thermally stable dopants for use in singlejunction gaas cell and tunnel junction design. Structure and simulation results in this paper, a single junction gaas solar cell with the single and double layer antireflection coating has been designed and simulated. In this work, the proposed optimization method is a genetic search algorithm implemented in matlab receiving atlas data to generate an optimum output power solar cell. Before studying the direct bonding of solar subcells, direct bonding of bulk gaas and inp wafers was investigated. Apr 02, 2016 alta devices manufactures thin flexible solar cells using gallium arsenide, holding the world record in efficiency 29% that convert light into electricity, which can be used in unmanned systems.
The bandgap of the gaas active layers can be calculated by subtracting kt2from this peak emission energy, where k is the boltzmann constant and t is the cell temperature in kelvin. Optimized single and double layer antireflection coatings. Therefore, we try optimize the design of allbackcontact gaas solar cells in this paper. The standard solar spectrum assumed in solar cell analysis is called am1.
Highperformance gaas nanowire solar cells for flexible and transparent photovoltaics. In this optimization, the gaas based part of the stack is unchanged and represents an ingap gaas ingaasnsb 3j,18 which is calculated to have a conversion efficiency of 43. The relation also enables a fair comparison between solar cells with different bandgaps. Physical parameters of the pn gaas solar cell used for numerical calculation. To improve the efficiency of the cell, it is critical to look at all the aspects while modelling the device. Gaas solar cell can harvest w in 100200 lux confidential and proprietary information of alta devices, inc. Ingapingaas tandem solar cells with very high specific power of 2000wkg at one sun intensity. The schematic of the gaas nanowire pin junction array solar cell and its algaas gaas heterojunction counterparts are illustrated in fig. Result is the solar energy needed in one day in whrs. Improved performance of ingaasgaas quantum dot solar. Optical concentration reduces the total cost of solar cells since concentrator materials are usually less expensive than the ones for solar cells sze.
At steady state, the carriers created from the solar photons absorbed by the cell must equal the. Gallium arsenide gaas is a compound of the elements gallium and arsenic. Optimization of gaas nanowire pin junction array solar. Though gallium arsenide gaas solar cells are proven to be relatively stable in space working conditions, they are prone to the effects of aging, which deteriorate their characteristics. Ingapin gaas tandem solar cells with very high specific power of 2000wkg at one sun intensity. Alta devices flexible solar cells using gallium arsenide. Abstract the electrical performance of gaas solar cells was characterized as a function of irradiation with protons and electrons with the underlying goal of producing solar cells suitable for use in space. Solar cell radiation environment analysis models scream. Anspaugh, gaas solar cell radiation handbook, jpl pub. Center for semiconductor research research triangle. Optimization of the off oriented ge substrates for movpe.
This dramatic breakthrough comes from the use of indium arsenide inas quantum dot layers, with appropriate strain compensation, to expand the spectral range and light conversion efficiency of the middlejunction of stateoftheart gallium arsenide gaas triple junction solar cells. Estimation of minority carrier diffusion lengths in inpgaas solar cells r. Pdf this paper presents the detailed performance analysis of single junction silicon and gaas solar cell using pc1d personal computer in. Ehs hazards associated with the manufacture of solar cells. The reported nanowireonsi tandem cell opens up great opportunities for highefficiency, lowcost multijunction solar cells. Alta devices manufactures thin flexible solar cells using gallium arsenide, holding the world record in efficiency 29% that convert light into electricity, which can be used in unmanned systems.
Reliability of cells from multiple substrate reuses. Our study focused on the potential stability of the perovskite solar cell being exposed to the space environment. The schematic of the gaas nanowire pin junction array solar cell and its algaasgaas heterojunction counterparts are illustrated in fig. Characterization of production gaas solar cells for space 4. Energy yield limits for singlejunction solar cells.
Gaas solar cell, space radiation, genetic algorithms, displacement damage dose 1. A library of semiconducting polymers with different band gaps and energy levels were evaluated in gaaspolymer planar heterojunctions. They successfully obtained spectrally and spatially resolved photoluminescence pl images of a standard gaas solar cell from the fraunhofer institute for solar energy systems ise. Highly efficient gaas solar cells by limiting light. Based solar cells for full solar spectrum energy harvesting. Gaas photovoltaics and optoelectronics using releasable. Improved performance of ingaasgaas quantum dot solar cells.
Introduction the study of solar cells which can convert solar energy directly into electrical power is becoming increasingly signi. Overview of pv ehs hazards brookhaven national laboratory. Ultralight flexible ingapin gaas tandem solar cells with conversion efficiency of 28. Jessica adams, microlink devices, epitaxial lift off iii. Spacecrafts circulating on low earth orbit of outer space are exposed to irradiations of energetic particles, typically electrons incident rate of 1mev electron. Real function of semiconducting polymer in gaaspolymer. Friedman 1, nikhil jain 1, paul sharps 2, claiborne mcpheeters 2, yukun sun 3, minjoo l. The cell structure can be represented in figure 1 and its parameters are presented in table. Gaasge heterostructure solar cells is justified from the photoluminescence spectroscopy. Algainp gaas tandem solar cells for power conversion at elevated temperature and high concentration emmett e. A conventional ingapingaasge solar cell structure was epitaxially grown on 180lm thick 400 diameter ptype 100 ge substrates at 640 c using veecos k475 commercial mocvd reactor. Occupational safety issues the main safety hazard of this technology is the use of sih4 gas, which is extremely pyrophoric. Furthermore, we derive an empirical relation that allows a straightforward approximation of energy yield from labmeasured efficiencies for any solar cell material.
Substrate reuse is one of the key process steps to lower cost for gaas thinfilm solar technology. Performance analysis of silicon and gaas single junction solar cell. Gaasingaas twojunction cell, to demonstrate a proof of principle for the viability of direct wafer bonding for solar cell applications. Pdf spectral characteristic of gaas solar cells grown by lpe.
In section 3, the electrical and optical behavior of the single and double layer arcs will be discussed. Estimation of minority carrier diffusion lengths in inpgaas. Previous results have demonstrated good electronic quality of csvt gaas using photoelectrochemical cells, but such devices have not been demonstrated to be commercially practical. Space solar cells offer high efficiencies, starting from the 28% class and ending in the highend cell class of 32% advanced.
Characterization of production gaas solar cells for space. Estimation of minority carrier diffusion lengths in inp gaas solar cells r. Cgs, gallium arsenide gaas and cadmium telluride cdte, which are currently. The controlled spalling technique is employed because of its simplicity to separate the solar cell structure from the growth substrate. We systematically investigated gaas polymer hybrid solar cells in a simple planar junction, aiming to fundamentally understand the function of semiconducting polymers in gaas polymerbased heterojunction solar cells. Study of the electrical parameters degradation of gaas sub. In this optimization, the gaasbased part of the stack is unchanged and represents an ingapgaasingaasnsb 3j,18 which is calculated to have a conversion efficiency of 43. It is a iiiv direct band gap semiconductor with a zinc blende crystal structure gallium arsenide is used in the manufacture of devices such as microwave frequency integrated circuits, monolithic microwave integrated circuits, infrared lightemitting diodes, laser diodes, solar cells and optical windows. No intrinsic degradation mechanism was found on material up to 10time substrate reuse. Optimization of gaas nanowire pin junction array solar cells. Highefficiency thinfilm ingapingaasge tandem solar cells. The design and optimization of gaas single solar cells. Highly efficient gaas solar cells by limiting light emission. Subsequently, the ge films on metal foils were used as substrates to fabricate flexible gaas singlejunction solar cell by metaloxide chemical vapor deposition mocvd.
Ideal for mating with a tiny solar cell to create an ultra low light energy harvester. The temperature variation affects these parameters and, hence, the performance of solar cells 18. The irradiation intensity from the solar simulator was calibrated using a commercialgrade calibrated singlejunction gaas solar cell spire corp. Confidential and proprietary information of alta devices, inc. Highefficiency gaas thinfilm solar cell reliability. All backcontacted gaas solar cells were created utilizing techniques and processes from the microsystem arena. Highperformance gaas nanowire solar cells for flexible. Fraunhofer institute for solar energy systems, ise with support of. E g, v oc, j sc, ff and z of single junction solar cells ignoring the series and shunt resistances. Demonstrated singlejunction gaas solar cell operating at 400. Estimation of minority carrier diffusion lengths in inp. Antireflective coating gaasge single junction solar cells. Backcontacted and small form factor gaas solar cell.
Nanotechnology to improve the efficiency of space solar cells. The allbackcontact solar cell can reduce the shadow loss. Gaas nanowire array solar cells with axial p n junctions. Flexible gaas solar cells on rolltoroll processed epitaxial. What links here related changes upload file special pages permanent link. The cells ranged in size from 250 m to 2 mm and the absorbing layer was 1. A solar cell, or photovoltaic cell, is an electrical device that converts the energy of light directly. We systematically investigated gaaspolymer hybrid solar cells in a simple planar junction, aiming to fundamentally understand the function of semiconducting polymers in gaaspolymerbased heterojunction solar cells. Jessica adams, microlink devices, epitaxial lift off iii v. A 532 nm laser was used to homogeneously illuminate the entire field of view under a microscope objective, allowing the pl signal coming from a million points to. Dualjunction gainpgaas solar cells are fabricated, and we show temperaturedependent external quantum efficiency, illuminated currentvoltage, and concentrator measurements from 25400c. Excellent stability of the flexible solar cell characteristics under different bending conditions in conjunction with its remarkably high specific power of 1995 wkg indicates the prospects of the controlled.
Excellent stability of the flexible solar cell characteristics under different bending conditions in conjunction with its remarkably high specific power of 1995 wkg. Pdf gaas solar cells are the highest efficiency singlejunction photovoltaic technology. In 1961, shockley and queisser showed that the maximum theoretical ef. Since gaas has excellent material properties, the optimization of structure design becomes more critical to boost the performance. In 2015, a 4junction gainpgaasgainaspgainas solar cell achieved a new. All solar cells include the latest triple and quadruple junction technology, where gainp gaas ge layers are grown on a germanium substrate and the whole product range benefits from many years experience on the space market. Studies of gaas solar cells grown by closespaced vapor.454 989 329 832 1089 761 1180 594 1568 843 1292 149 741 767 866 90 262 506 825 216 1511 799 1026 441 21 1249 906 1227 23 79 1084 1398 880 185 861 199 1029 400